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Diode
laser bars |
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Single
chips consist of a single emitter and are usually
used in telecommunication products, |
e.g.
for signal transmission or in consumer products,
e.g. CD players. For the use in high- |
power
diode lasers, several emitters such as illustrated
in are united to a so-called laser |
diode
bar. Theoretically, it would also be possible
to mount several single chips onto one |
heat sink each and to integrate them on a single
common mechanical base. |
Today,
laser diode bars are used almost exclusively
due to the simplified handling and the |
higher
precision of the spatial arrangement of the
single emitters obtainable with bars. |
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Fig.2 Laser diode bars
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In
a bar, the individual emitting areas (emitters)
lie side by side and, together with the non- |
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emitting
areas between the emitters, they form the so-called
active layer. Emitters may have |
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the
form of strip arrays or wide strips. |
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The
number, the width and the spacing of the emitters
are dependent on the manufacturer. |
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The
relative value of the emitting areas in the
active layer with respect to the bar width is
called |
filling
factor (FF). Typical filling factors are 30...90%. |
The
center-to-center distance between two adjacent
emitters is called pitch. |
Z
is the propagation axis of the laser radiation.
The propagation axis Y is called fast axis (FA), |
the
propagation axis X is termed slow axis (SA).
This is connected with the beam angle |
(divergence)
in the two planes, XZ and YZ |
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